| Photon energy | 1486.61eV |
| Spectrum type | Cu 2s |
| Resolution | 20 |
| Dwell Time | 0.2 |
| Step size | 0.1 |
| Number of scans | 1 |
| Name | 3. Cu in 4mbar He |
| Ex situ preparation | Clamped sample to stainless steel holder using stainless steel clips. |
| In situ preparation | Sputter cleaned for 15 min using Ar at 3kV and a pressure of 1E-5 mbar |
| Additional Information | Measured from a Cu foil in 4 mbar of He, with the sample at a distance of 0.8 mm away from the nozzle. Nozzle diameter was 0.8 mm. |
| Measurement Date | 11-03-2020 |
| Condition | Value | Units |
|---|---|---|
| pressure | 4 | mbar |
| ambient composition | He | none |
| temperature | 25 | C |
| Analyzer Mode | FAT |
| Area | 0.8 mm diameter |
| Strength | 150 W, 15 kV |
| Source Beam Size | 0.8 mm diameter |
| Take Off Angle | 90 degrees |
| Analyzer Acceptance Angle | 22 degrees |
| Laboratory | Surface Analytics |
| Instrument | Phoibos NAP-150 |
| Protocol | ISO 15472:2010 |
| Calibration date | 17-08-2020 |
| Binding Energy | 83.96 |
| Emission line | Au 4f7/2 |
| Binding Energy | 932.62 |
| Emission line | Cu 2p3/2 |
