Measurement Data
General Info
Focus 500 x-ray source, Phoibos 100 analyzer
Al2O3/NiAl(110) oxidation in NO2
This will generate DOI for the whole data collection
Controlled thickening of alumina film on NiAl(110) using NO2 Dataset published https://pubs.acs.org/doi/abs/10.1021/acs.jpcb.7b06790
Contributors
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Rik Mom
Owner
Photon energy 1486.61eV
Spectrum type C 1s
Resolution 10
Dwell Time 0.1
Step size 0.1
Number of scans 60
Sample Info
Al2O3/NiAl(110) as prepared
Cleaning: 1.5 keV Ar+ sputtering and annealing at 1300 K. Initial alumina growth: three cycles of 5×10−6mbar O2 exposure at 550 K and subsequent UHV annealing at 1100 K (1050 K in the final cycle).
Cleanliness was check with STM. Binding energy calibration to literature Al 2p metal peak
O
Al
Ni
Dataset Info

This will generate DOI for a single dataset
4
26-04-2016
Conditions
Temperature
293
K

Pressure
10^-9
mbar

Photon energy 1486.61eV
Spectrum type C 1s
Resolution 10
Dwell Time 0.1
Step size 0.1
Number of scans 60
Sample Info
Al2O3/NiAl(110) 2 cycles NO2
2 cycles of 5x10^-7 mbar NO2 adsorption at 693 K and annealing at 1200 K
Preparation initial oxide film: Cleaning: 1.5 keV Ar+ sputtering and annealing at 1300 K. Initial alumina growth: three cycles of 5×10−6mbar O2 exposure at 550 K and subsequent UHV annealing at 1100 K (1050 K in the final cycle).
O
Al
Ni
Dataset Info

This will generate DOI for a single dataset
4
28-04-2016
Conditions
Temperature
293
K

Pressure
10^-9
mbar

Photon energy 1486.61eV
Spectrum type C 1s
Resolution 10
Dwell Time 0.1
Step size 0.1
Number of scans 60
Sample Info
Al2O3/NiAl(110) 4 cycles NO2
4 cycles of 5x10^-7 mbar NO2 adsorption at 693 K and annealing at 1200 K
Preparation initial oxide film: Cleaning: 1.5 keV Ar+ sputtering and annealing at 1300 K. Initial alumina growth: three cycles of 5×10−6mbar O2 exposure at 550 K and subsequent UHV annealing at 1100 K (1050 K in the final cycle).
O
Al
Ni
Dataset Info

This will generate DOI for a single dataset
4
29-04-2016
Conditions
Temperature
293
K

Pressure
10^-9
mbar

Calibration
ISO 15472:2010
fermi
-
-
Conductive